Control of a III-V MOCVD Process using Ultraviolet Absorption and Ultrasonic Concentration Monitoring
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Date
2001-09Type
- Journal Article
ETH Bibliography
no
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Abstract
Metalorganic chemical vapor deposition (MOCVD) is a key technology for the growth of compound semiconductors. This process has traditionally lacked real-time growth monitoring and control, which limits the precise reproducibility needed for high performance devices. Two complementary control approaches for the MOCVD process are investigated experimentally. The first is a feedforward disturbance rejection strategy using ultrasonic concentration measurements to reject source gas bubbler disturbances. The second is a feedback system using an ultraviolet (UV) absorption sensor for real-time monitoring of reaction chamber gas concentrations. Post-growth X-ray diffraction and photoluminescence of InP/GaInAs superlattice test devices are used to evaluate control system performance. Show more
Permanent link
https://doi.org/10.3929/ethz-b-000672258Publication status
publishedExternal links
Journal / series
IEEE Transactions on Control Systems TechnologyVolume
Pages / Article No.
Publisher
IEEEOrganisational unit
08814 - Smith, Roy (Tit.-Prof.)
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ETH Bibliography
no
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