IEEE Electron Device Letters

Journal: IEEE Electron Device Letters

Abbreviation

IEEE Electron Device Lett.

Publisher

IEEE

ISSN

0741-3106
1558-0563

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Publications 1 - 10 of 57

InP/GaAsSb DHBTs With 500-GHz Maximum Oscillation Frequency
Lövblom, Rickard; Flückiger, Ralf; Zeng, Yuping; et al. (2011)
IEEE Electron Device Letters
Transistor heater for microhotplate-based metal-oxide microsensors
Graf, M.; Müller, S.K.; Barrettino, D.; et al. (2005)
IEEE Electron Device Letters
Ab-Initio Simulation of van der Waals MoTe2–SnS2 Heterotunneling FETs for Low-Power Electronics
Szabó, Áron; Koester, Steven J.; Luisier, Mathieu M. (2015)
IEEE Electron Device Letters
Oxide Thin-Film Electronics on Carbon Fiber Reinforced Polymer Composite
Münzenrieder, Niko; Costa, Júlio; Cantarella, Giuseppe; et al. (2017)
IEEE Electron Device Letters
107-GHz (Al,Ga)N/GaN HEMTs on Silicon With Improved Maximum Oscillation Frequencies
Tirelli, Stefano; Marti, Diego; Sun, Haifeng; et al. (2010)
IEEE Electron Device Letters
100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With FT=144 GHz
Sun, Haifeng; Alt, Andreas R.; Benedickter, Hansruedi; et al. (2010)
IEEE Electron Device Letters
One-hundred-nanometer-gate (Al,In)N/GaN high-electron-mobility transistors (HEMTs) grown on semi-insulating SiC achieve a maximum current density of 1.84 A/mm at V GS = 0 V, an extrinsic transconductance of 480 mS/mm, and a peak current gain cutoff frequency as high as f T = 144 GHz, which is the highest so far reported for any (Al,In)N/GaN-based HEMT. This f T matches the best published values that we could find for 100-nm-gate (Al,Ga)N/GaN HEMTs, thus closing the cutoff frequency gap between (Al,In)N/GaN and (Al,Ga)N/GaN HEMTs. Additionally, similar devices grown on (111) high-resistivity silicon show a peak f T of 113 GHz, also setting a new performance benchmark for (Al,In)N/GaN HEMTs on silicon. Our findings indicate significant performance advantages for (Al,In)N/GaN HEMTs fabricated on SiC substrates. The improved performance for devices grown on SiC is derived from the superior transport properties of (Al,In)N/GaN 2DEGs grown on that substrate.
Band-to-Band Tunneling in SiGe: Influence of Alloy Scattering
Jin, Seonghoon; Park, Hong-Hyun; Luisier, Mathieu; et al. (2017)
IEEE Electron Device Letters
Submicrometer Copper T-Gate AlGaN/GaN HFETs
Sun, H. F.; Alt, Andreas R.; Bolognesi, Colombo R. (2007)
IEEE Electron Device Letters
Emitter Size Effect in GaAsSb-Based DHBTs With AlInP and GaInP Emitters
Lövblom, Rickard; Flückiger, Ralf; Ostinelli, Olivier; et al. (2013)
IEEE Electron Device Letters
Fully Passivated AlInN/GaN HEMTs With f(T)/f(MAX) of 205/220 GHz
Tirelli, S.; Marti, D.; Sun, Haifeng; et al. (2011)
IEEE Electron Device Letters

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Journal: IEEE Electron Device Letters

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