Journal: IEEE Transactions on Electron Devices

Abbreviation

IEEE Trans. Electron Devices

Publisher

IEEE

Journal Volumes

ISSN

0018-9383
1557-9646

Description

Filters

Reset filters

Search Results

Publications 1 - 10 of 74
  • Analysis of Current Capability of SiC Power MOSFETs Under Avalanche Conditions
    Item type: Journal Article
    Nida, Selamnesh; Kakarla, Bhagyalakshmi; Ziemann, Thomas; et al. (2021)
    IEEE Transactions on Electron Devices
    The phenomenon of reduced energy capability of power metal-oxide-semiconductor field-effect transistors (MOSFETs) at high avalanche currents is investigated in commercial 1.2-kV 4H-SiC MOSFETs. Unclamped inductive switching (UIS) measurements as well as electrical transport simulations are used to identify the current paths and maximum avalanche currents, providing insight into the design limits. The investigated devices show a reduced energy capability for avalanche current above 52 A due to the latching of the parasitic bipolar junction transistor (BJT). The BJT also limits the maximum switchable current to $\leq$ 102 A. Based on the measurements and simulations, a procedure utilizing UIS measurements for identification of design limits is presented.
  • Temperature and Parasitic Photocurrent Effects in Dynamic Vision Sensors
    Item type: Journal Article
    Nozaki, Yuji; Delbrück, Tobias (2017)
    IEEE Transactions on Electron Devices
    The effect of temperature and parasitic photocurrent on event-based dynamic vision sensors (DVS) is important because of their application in uncontrolled robotic, automotive, and surveillance applications. This paper considers the temperature dependence of DVS threshold temporal contrast (TC), dark current, and background activity caused by junction leakage. New theory shows that if bias currents have a constant ratio, then ideally the DVS threshold TC is temperature independent, but the presence of temperature dependent junction leakage currents causes nonideal behavior at elevated temperature. Both measured photodiode dark current and leakage induced event activity follow Arhenius activation. This paper also defines a new metric for parasitic photocurrent quantum efficiency and measures the sensitivity of DVS pixels to parasitic photocurrent.
  • Investigation of Source Starvation in High-Transconductance III-V Quantum-Well MOSFETs
    Item type: Journal Article
    Rau, Martin; Lin, Jianqiang; Antoniadis, Dimitri A.; et al. (2019)
    IEEE Transactions on Electron Devices
  • Design of On-Wafer TRL Calibration Kit for InP Technologies Characterization up to 500 GHz
    Item type: Journal Article
    Deng, Marina; Mukherjee, Chhandak; Yadav, Chandan; et al. (2020)
    IEEE Transactions on Electron Devices
    This article reports a detailed approach toward optimization of on-wafer thru-reflect-line (TRL) calibration structures for submillimeter-wave characterization of a state-of-the-art indium-phosphide (InP) technology, validated by thorough experimentation and electromagnetic (EM) simulation. The limitations of the existing RF test structures for high-frequency measurements beyond 110 GHz are analyzed through EM simulation. Using an optimization procedure based on calibration of raw EM simulated data, on-wafer TRL calibration structures were developed and fabricated in a subsequent run of this technology. Measurements could be achieved up to 500 GHz on the passive devices and up to 330 GHz on the InP double heterojunction bipolar transistors (DHBTs). The transistor measurements were validated by comparison with the HiCuM compact model simulation to 330 GHz for the InP DHBTs. © 2020 IEEE.
  • On the Interpretation of Ballistic Injection Velocity in Deeply Scaled MOSFETs
    Item type: Journal Article
    Liu, Y.; Luisier, M.; Majumdar, A.; et al. (2012)
    IEEE Transactions on Electron Devices
  • Self-Aligned Amorphous Silicon Thin-Film Transistors Fabricated on Clear Plastic at 300 ˚C
    Item type: Journal Article
    Cherenack, K.H.; Hekmatshoar, B.; Sturm, James C.; et al. (2010)
    IEEE Transactions on Electron Devices
  • InAs Channel Inset Effects on the DC, RF, and Noise Properties of InP pHEMTs
    Item type: Journal Article
    Calvo Ruiz, Diego; Saranovac, Tamara; Han, Daxin; et al. (2019)
    IEEE Transactions on Electron Devices
  • Monte Carlo Comparison of n-Type and p-Type Nanosheets with FinFETs: Effect of the Number of Sheets
    Item type: Journal Article
    Bufler, Fabian M.; Jang, Doyoung; Hellings, Geert; et al. (2020)
    IEEE Transactions on Electron Devices
    Analytic doping profiles and contact resistivities are adjusted to reproduce measured transfer characteristics of state-of-the-art n-type and p-type FinFETs by Monte Carlo device simulation. The results are used to compare the performance of nanosheets (NSs) and FinFETs at advanced-node device dimensions. It is found that the ON-current normalized by the effective gate width reduces for a higher number of sheets due to a higher access resistance of the lower-lying sheets. In order to reach the same absolute current level of FinFETs with a fin height of 55 nm, more than two sheets for n-type and about four sheets for the p-type NSs with a NS width of 16 nm are needed, respectively. This technology computer-aided design (TCAD) approach can serve as input for design-technology cooptimization (DTCO) of advanced devices
  • Spatially Resolved Diffusion of Aluminum in 4H-SiC During Postimplantation Annealing
    Item type: Journal Article
    Müting, Johanna; Bobal, Viktor; Willinger, Marc; et al. (2020)
    IEEE Transactions on Electron Devices
    The fabrication of power semiconductor devices based on 4H-silicon carbide (SiC) typically includes doping by ion implantation and postimplantation annealing to activate the implanted dopants. The high-temperature annealing process can initiate various diffusion mechanisms that alter the initial implantation profile in terms of spatial distribution and doping concentration. To investigate the diffusion of aluminum, the main p-dopant in 4H-SiC, samples are prepared by ion implantation and subsequent annealing at 1650 °C for 30 min. Secondary ion mass spectrometry (SIMS) measurements before and after the annealing process are performed to monitor the aluminum concentration. A significant amount of aluminum moves toward the surface and into the lateral direction, which is shown to be directly related to the implantation-induced point defects. Transmission electron microscopy (TEM) images support the discussion of diffusion mechanisms and their dependence on the defect type.
  • Two-dimensional monolithic Lead chalcogenide infrared sensor Arrays on silicon read-out chips and noise mechanisms
    Item type: Journal Article
    Zogg, H.; Alchalabi, K.; Zimin, D.; et al. (2003)
    IEEE Transactions on Electron Devices
Publications 1 - 10 of 74