Physica Status Solidi A

Journal: Physica Status Solidi A

Abbreviation

Phys. Status Solidi A

Publisher

Wiley-VCH

ISSN

1862-6300
1862-6319
0031-8965
1521-396X

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Publications 1 - 6 of 6

Cross-Sectional Carrier Lifetime Profiling and Deep Level Monitoring in Silicon Carbide Films Exhibiting Variable Carbon Vacancy Concentrations
Galeckas, Augustinas; Karsthof, Robert; Gana, Kingsly; et al. (2023)
Physica Status Solidi A
The carrier lifetime control over 150 μm thick 4H-SiC epitaxial layers via thermal generation and annihilation of carbon vacancy (VC) related Z1/2 lifetime killer sites is reported. The defect developments upon typical SiC processing steps, such as high- and moderate-temperature anneals in the presence of a carbon cap, are monitored by combining electrical characterization techniques capable of VC depth-profiling, capacitance–voltage (CV) and deep-level transient spectroscopy (DLTS), with a novel all-optical approach of cross-sectional carrier lifetime profiling across 4H-SiC epilayer/substrate based on imaging time-resolved photoluminescence (TRPL) spectroscopy in orthogonal pump-probe geometry, which readily exposes in-depth efficacy of defect reduction and surface recombination effects. The lifetime control is realized by initial high-temperature treatment (1800 °C) to increase VC concentration to ≈1013 cm−3 level followed by a moderate-temperature (1500 °C) post-annealing of variable duration under C-rich thermodynamic equilibrium conditions. The post-annealing carried out for 5 h in effect eliminates VC throughout the entire ultra-thick epilayer. The reduction of VC-related Z1/2 sites is proven by a significant lifetime increase from 0.8 to 2.5 μs. The upper limit of lifetimes in terms of carrier surface leakage and the presence of other nonradiative recombination centers besides Z1/2, possibly related to residual impurities such as boron are discussed.
Pinning induced magnetostriction in superconductive MgB2 ceramics
Bukhantsev, Yu.; Kundys, B.; Naialek, A.; et al. (2003)
Physica Status Solidi A
Spatially resolved characterization of chemical species and crystal structures in CuInS2 and CuGax Sey thin films using Raman microscopy
Schmid, Thomas; Camus, Christian; Lehmann, Sebastian; et al. (2009)
Physica Status Solidi A
Spontaneous growth of uniformly distributed In nanodots and InI3 nanowires on InP induced by a focused ion beam
Callegari, Victor; Nellen, P. (2007)
Physica Status Solidi A
Linear and non-linear optical experiments based on macroporous silicon photonic crystals
Wehrspohn, Ralf B.; Schweizer, Stefan L.; Sandoghdar, Vahid (2007)
Physica Status Solidi A
Electro-optical intersubband modulators at telecommunication wavelengths based on GaN/AlN quantum wells
Kheirodin, N.; Nevou, L.; Machhadani, H.; et al. (2008)
Physica Status Solidi A

Publications 1 - 6 of 6

Journal: Physica Status Solidi A

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