Journal of Microelectromechanical Systems

Journal: Journal of Microelectromechanical Systems

Publisher

IEEE

ISSN

1057-7157
1941-0158

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Publications 1 - 10 of 23

Monolithically fabricated microgripper with integrated force sensor for manipulating microobjects and biological cells aligned in an ultrasonic field
Beyeler, Felix; Neild, Adrian P.; Oberti, Stefano; et al. (2007)
Journal of Microelectromechanical Systems
A Multilevel CMOS-MEMS Design Methodology Based on Response Surface Models
Sato, Norio; Sato, Yasuhiro; Kado, Yuichi; et al. (2011)
Journal of Microelectromechanical Systems
Large Stroke Staggered Vertical Comb-Drive Actuator for the Application of a Millimeter-Wave Tunable Phase Shifter
Li, Y. J.; Psychogiou, D.; Kuhne, S.; et al. (2013)
Journal of Microelectromechanical Systems
Resonant Magnetic Field Sensor With Frequency Output
Sunier, Robert; Vancura, Tobias; Li, Yue; et al. (2006)
Journal of Microelectromechanical Systems
Bi2Te3-Based Flexible Micro Thermoelectric Generator with Optimized Design
Glatz, Wulf; Schwyter, Etienne; Durrer, Lukas; et al. (2009)
Journal of Microelectromechanical Systems
A Six-Axis MEMS Force–Torque Sensor With Micro-Newton and Nano-Newtonmeter Resolution
Beyeler, Felix; Muntwyler, Simon; Nelson, Bradley J. (2009)
Journal of Microelectromechanical Systems
Off-Resonant Vibration Amplifier With Flattened Band-Pass Characteristic and Improved Axis Selectivity
Maiwald, Verena; Müller, Michelle; Ritz, Christian; et al. (2017)
Journal of Microelectromechanical Systems
We present the design, fabrication, and characterization of an in-plane vibration sensor with frequency selective displacement amplification and differential capacitive read-out. The mechanical structure is based on six resonators with decreasing stiffness coupled in-plane. A differential capacitance attached to the last mass serves as electrical read out. Finite element and lumped element models are both presented. The devices were fabricated in a single mask silicon on insulator-based process. The mechanical, as well as the capacitive transfer function and the pressure dependence, have been investigated experimentally and compared with simulations. The measured mean (minimum) amplification was 24 dB (16 dB) over a bandwidth of 10 kHz (3-13 kHz). While the mean amplification is pressure dependent, the minimum amplification and bandwidth show a less than 10% decrease over a wide pressure range from 6.3 to 64 mbar. The pressure dependent measurements also show that the minimum amplification is independent of the Q factor of the modes down to values of Q~10. Both simulation and experiment show that the off-axis modes occur outside the bandwidth of the device. Along with the low cross-sensitivity of the capacitive readout (0.06%), this provides good axis selectivity despite the high number of degrees of freedom. The device can be used for detection of broadband vibration signals, e.g., for structural monitoring of infrastructure such as bridges and pipelines.
Magnetic composite electroplating for depositing micromagnets
Guan, Shan; Nelson, Bradley J. (2006)
Journal of Microelectromechanical Systems
Modeling Electrochemical Etching of Proton Irradiated p-GaAs for the Design of MEMS Building Blocks
Koppe, Tristan; Rothfuchs, Charlotte; Schulte-Borchers, Martina; et al. (2014)
Journal of Microelectromechanical Systems
Thermoelectric and Thermoresistive Effect in Bi2Se3: A Novel Dual-Mode Temperature and Heat Flux Sensor
Klösel, Katrina; Roman, Cosmin; Hierold, Christofer (2023)
Journal of Microelectromechanical Systems
Here we present a sensor concept for simultaneous heat flux and temperature acquisition based on the thermoelectric and thermoresistive effect in n-type orthorhombic Bi2Se3. Measurements were performed in the 283-343 K temperature range. Temperature sensitivities as high as -36700 ppm/K (equivalent to a beta-value of 3260 K) and heat flux sensitivities of 0.125 mu V/(W/m(2)) were determined. The temperature and heat flux accuracies were found to be +/- 0.6 K and +/- 20 W (through a 1cm x 1cm area, equiv. to +/- 1 K) and the resolution was determined to be around 0.05 K. The underlying physical mechanisms were further investigated and a deep donor level with ionization energy of 0.292 eV was identified leading to a strong temperature-dependence of donor ionization. The presented device architecture has the potential to be utilized in applications where dual-mode simultaneous temperature and heat flux measurements are beneficial. [2023-0093]

Publications 1 - 10 of 23

Journal: Journal of Microelectromechanical Systems

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