Journal: Materials Science Forum

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Trans Tech Publications

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0255-5476
1662-9752

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Publications 1 - 10 of 62
  • The role of vacancies in the aging of Al-Mg-Si alloys
    Item type: Journal Article
    Pogatscher, Stefan; Werinos, Marion; Antrekowitsch, Helmut; et al. (2014)
    Materials Science Forum
  • Low-Energy Muons as a Tool for a Depth-Resolved Analysis of the SiO2/4H-SiC Interface
    Item type: Conference Paper
    Woerle, Judith; Prokscha, Thomas; Grossner, Ulrike (2020)
    Materials Science Forum
    In this work, the potential of muon spin rotation (μSR) with low-energy muons (LE-μ) for the investigation of oxidation-induced defects at the SiO2/4H-SiC interface is explored. By using implantation energies for the muons in the keV range and comparing the fractions of muonium in different regions, the depth distribution of defects in the first 200 nm of the target material can be resolved. Defect profiles of interfaces with either deposited or thermally grown SiO2 layers on 4H-SiC are compared. The results show an increased number of defects in the case of a thermal oxide, both on the oxide and on the SiC side of the interface, with a spatial extension of a few tens of nm.
  • Order-Disorder Phase Transition in NaBD_(4)
    Item type: Journal Article
    Fischer, P.; Züttel, Andreas (2004)
    Materials Science Forum
  • Functional Materials and Materials Reliability
    Item type: Edited Volume
    (2023)
    Materials Science Forum
  • Optimization of positron lifetime spectrometer using Monte-Carlo simulation of the detectors
    Item type: Conference Paper
    Crivelli, Paolo; Gendotti, Ulisse; Rubbia, André; et al. (2009)
    Materials Science Forum ~ Positron and positronium chemistry: proceedings of the 9th international workshop on Positron and Positronium Chemistry, May 11-15, 2008, Wuhan University, China
  • Lateral straggling of Ion implantation distributions in 4H-SiC investigated by SIMS
    Item type: Conference Paper
    Müting, Johanna; Bobal, Viktor; Azarov, Alexander; et al. (2019)
    Materials Science Forum ~ Silicon Carbide and Related Materials 2018
  • Analysis of 4H-SiC MOS Capacitors on Macro-Stepped Surfaces
    Item type: Conference Paper
    Camarda, Massimo; Woerle, Judith; Soulière, Veronique; et al. (2017)
    Materials Science Forum
    In this study, we compare the electrical properties of MOS capacitors fabricated on different surface morphologies. Comparing a standard, low-roughness (<1nm), surface with one with a roughness of ~40nm, characterized by big macrosteps and large terraces. We compared the two surfaces for different thermal oxide thicknesses, ranging from dOx = 3.6 nm to dOx = 32 nm. The extracted interface state traps (Dit) shows a small, but systematic, decrease of ~10-15 % for the samples with macrosteps.
  • Al+ ion implanted on-axis <0001>semi-insulating 4H-SiC
    Item type: Conference Paper
    Nipoti, Roberta; Parisini, Antonella; Carnera, Alberto; et al. (2015)
    Materials Science Forum ~ Silicon Carbide and Related Materials 2014
  • 1950°C annealing of Al+ implanted 4H-SiC: Sheet resistance dependence on the annealing time
    Item type: Conference Paper
    Nipoti, Roberta; Parisini, Antonella; Vantaggio, Salvatore; et al. (2016)
    Materials Science Forum ~ Silicon Carbide and Related Materials 2015
    This study shows that, after annealing at 1950°C, a 1×1020 cm-3 Al+ implanted 4H-SiC material shows a decreasing resistivity with increasing annealing time in the range 5-25 min. After this, the resistivity remains constant up to an annealing time of 40 min. The estimated minimum time to gain the thermal equilibrium in this implanted material at 1950°C is 12 min. Electrical characterization has been performed in the 20-680 K temperature range.
  • Investigation of Nanocrystalline Fe by Small-Angle Neutron Scattering
    Item type: Journal Article
    Löffler, Jörg F.; Wagner, W.; Swygenhoven, H. van (1996)
    Materials Science Forum
Publications 1 - 10 of 62