Nanotechnology

Journal: Nanotechnology

Publisher

IOP Publishing

ISSN

1361-6528
0957-4484

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Publications 1 - 10 of 127

Optimal ferromagnetically-coated carbon nanotube tips for ultra-high resolution magnetic force microscopy
Lisunova, Yuliya; Heidler, Jakoba; Levkivskyi, Ivan P.; et al. (2013)
Nanotechnology
Improved degradation and bioactivity of amorphous aerosol derived tricalcium phosphate nanoparticles in poly(lactide-co-glycolide)
Loher, Stefan; Reboul, Valentine; Brunner, Tobias J.; et al. (2006)
Nanotechnology
Tunable few-electron quantum dots in InAs nanowires
Shorubalko, Ivan; Pfund, Andreas; Leturcq, Renaud; et al. (2007)
Nanotechnology
Quantum dots realized in InAs are versatile systems to study the effect of spin–orbit interaction on the spin coherence, as well as the possibility to manipulate single spins using an electric field. We present transport measurements on quantum dots realized in InAs nanowires. Lithographically defined top gates are used to locally deplete the nanowire and to form tunnelling barriers. By using three gates, we can form either single quantum dots, or two quantum dots in series along the nanowire. Measurements of the stability diagrams for both cases show that this method is suitable for producing high quality quantum dots in InAs.
Nano- and microscale apertures in metal films fabricated by colloidal lithography with perovskite nanocrystals
Spirito, Davide; Shamsi, Javad; Imran, Muhammad; et al. (2020)
Nanotechnology
Inorganic-organic elastomer nanocomposites from integrated ellipsoidal silica-coated hematite nanoparticles as crosslinking agents
Sánchez-Ferrer, Antoni; Reufer, M.; Mezzenga, R.; et al. (2010)
Nanotechnology
Stability and analysis of configuration-tunable bi-directional MWNT bearings
Subramanian, Arunkumar; Dong, L.X.; Nelson, Bradley J. (2009)
Nanotechnology
Phonon-mediated back-action of a charge readout on a double quantum dot
Gasser, U.; Gustavsson, S.; Kueng, B.; et al. (2010)
Nanotechnology
Microstructure and ferroelectricity of BaTiO₃ thin Films on Si for integrated photonics
Kormondy, Kristy; Popoff, Youri; Sousa, Marilyne A.; et al. (2017)
Nanotechnology
Towards a full integration of vertically aligned silicon nanowires in MEMS using silane as a precursor
Gadea, Gerard; Morata, Alex; Santos, Jose D.; et al. (2015)
Nanotechnology
Silicon nanowires present outstanding properties for electronics, energy, and environmental monitoring applications. However, their integration into microelectromechanical systems (MEMS) is a major issue so far due to low compatibility with mainstream technology, which complicates patterning and controlled morphology. This work addresses the growth of 〈111〉 aligned silicon nanowire arrays fully integrated into standard MEMS processing by means of the chemical vapor deposition–vapor liquid solid method (CVD–VLS) using silane as a precursor. A reinterpretation of the galvanic displacement method is presented for selectively depositing gold nanoparticles of controlled size and shape. Moreover, a comprehensive analysis of the effects of synthesis temperature and pressure on the growth rate and alignment of nanowires is presented for the most common silicon precursor, i.e., silane. Compared with previously reported protocols, the redefined galvanic displacement together with a silane-based CVD–VLS growth methodology provides a more standard and low-temperature (<650 °C) synthesis scheme and a compatible route to reliably grow Si nanowires in MEMS for advanced applications.
Sub-10 nm patterning using EUV interference lithography
Päivänranta, Birgit; Langner, Andreas; Kirk, Eugenie; et al. (2011)
Nanotechnology

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Journal: Nanotechnology

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