APL Materials

Journal: APL Materials

Publisher

American Institute of Physics

ISSN

2166-532X

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Publications1 - 10 of 26

Field-effect transistor based on surface negative refraction in Weyl nanowire
Chen, Guangze; Chen, Wei; Zilberberg, Oded (2020)
APL Materials
Weyl semimetals are characterized by their bulk Weyl points—conical band touching points that carry a topological monopole charge—and Fermi arc states that span between the Weyl points on the surface of the material. Recently, significant progress has been made toward the understanding and measurement of the physical properties of Weyl semimetals. Yet, potential applications remain relatively sparse. Here we propose Weyl semimetal nanowires as field-effect transistors, dubbed WEYLFETs. Specifically, applying gradient gate voltage along the nanowire, an electric field is generated, which effectively tilts the open surfaces, thus, varying the relative orientation between Fermi arcs on different surfaces. As a result, perfect negative refraction between adjacent surfaces can occur and longitudinal conductance along the wire is suppressed. The WEYLFET offers a high on/off ratio with low power consumption. Adverse effects due to dispersive Fermi arcs and surface disorder are studied.
Vibrational properties of LaNiO3 films in the ultrathin regime
Schober, Alexander; Fowlie, Jennifer; Guennou, Mael; et al. (2020)
APL Materials
Collective rotations and tilts of oxygen polyhedra play a crucial role in the physical properties of complex oxides such as magnetism and conductivity. Such rotations can be tuned by preparing thin films in which dimensionality, strain, and interface effects come into play. However, little is known of the tilt and rotational distortions in films a few unit cells thick including the question of if coherent tilt patterns survive at all in this ultrathin limit. Here, a series of films of perovskite LaNiO3 is studied and it is shown that the phonon mode related to oxygen octahedral tilts can be followed by Raman spectroscopy down to a film thickness of three pseudocubic perovskite unit cells (∼1.2 nm). To push the limits of resolution to the ultrathin regime, a statistical analysis method is introduced to separate the Raman signals of the film and substrate. Most interestingly, these analyses reveal a pronounced hardening of the tilt vibrational mode in the thinnest films. A comparison between the experimental results, first principles simulations of the atomic structure, and the standing wave model, which accounts for size effects on the phononic properties, reveals that in the ultrathin regime, the Raman spectra are a hybrid entity of both the bulk and surface phononic behavior. These results showcase Raman spectroscopy as a powerful tool to probe the behavior of perovskite films down to the ultrathin limit.
Simultaneous imaging of the ferromagnetic and ferroelectric structure in multiferroic heterostructures
Unguris, John; Bowden, Samuel R.; Pierce, Daniel T.; et al. (2014)
APL Materials
By measuring the spin polarization of secondary electrons and the intensity of backscattered electrons generated in a scanning electron microscope, we are able to simultaneously image the ferromagnetic domain structure of a ferromagnetic thin film and the ferroelectric domain structure of the underlying ferroelectric substrate upon which it is grown. Simultaneous imaging allows straightforward, quantitative measurements of the correlations in these complex multiferroic systems. We have successfully imaged domains in CoFe/BFO and Fe/BTO, two systems with very different ferromagnet/ferroelectric coupling mechanisms, demonstrating how this technique provides a new local probe of magneto electric/strictive effects in multiferroic heterostructures.
Stabilization of ferroelectric HfxZr1-xO2 films using a millisecond flash lamp annealing technique
O'Connor, Éamon; Halter, Mattia; Eltes, Felix; et al. (2018)
APL Materials
We report on the stabilization of ferroelectric HfxZr1−xO2 (HZO) films crystallized using a low thermal budget millisecond flash lamp annealing technique. Utilizing a 120 s 375 °C preheat step combined with millisecond flash lamp pulses, ferroelectric characteristics can be obtained which are comparable to that achieved using a 300 s 650 °C rapid thermal anneal. X-ray diffraction, capacitance voltage, and polarization hysteresis analysis consistently point to the formation of the ferroelectric phase of HZO. A remanent polarization (Pr) of ∼21 μC/cm2 and a coercive field (Ec) of ∼1.1 MV/cm are achieved in 10 nm thick HZO layers. Such a technique promises a new alternative solution for low thermal budget formation of ferroelectric HZO films.
Engineering the magnetic order in epitaxially strained Sr1−xBaxMnO3 perovskite thin films
Maurel, Laura; Marcano, N.; Langenberg, Eric; et al. (2019)
APL Materials
Chemical doping and epitaxy can be used to tailor the magnetoelectric properties of multiferroic thin films, such as SrMnO3. Here, we study the dependence of the magnetic order temperatures of Sr1−xBaxMnO3 thin films on epitaxial strain and Ba content. Combining low-energy muon spin spectroscopy and scanning transmission electron microscopy, the broadness of the magnetic transition is attributed to the presence of a Mn-O-Mn angle gradient along the out-of-plane direction. We also demonstrate that the unit cell volume is the key parameter to determine the Néel temperature in Sr1−xBaxMnO3 thin films showing G-type antiferromagnetic order. The occurrence of a simultaneously ferroelectric and ferromagnetic ground state at high strain levels is suggested for the Sr0.8Ba0.2MnO3 thin film deposited on TbScO3.
Onset of vertical threading dislocations in Si1−xGex/Si (001) at a critical Ge concentration
Isa, Fabio; Marzegalli, Anna; Taboada, Alfonso G.; et al. (2013)
APL Materials
We show that the Ge concentration in Si1−xGex alloys grown under strong out-of-equilibrium conditions determines the character of the population of threading dislocations (TDs). Above a critical value x ∼ 0.25 vertical TDs dominate over the common slanted ones. This is demonstrated by exploiting a statistically relevant analysis of TD orientation in micrometer-sized Si1−xGex crystals, deposited on deeply patterned Si(001) substrates. Experiments involving an abrupt change of composition in the middle of the crystals clarify the role of misfit-strain versus chemical composition in favoring the vertical orientation of TDs. A scheme invoking vacancy-mediated climb mechanism is proposed to rationalize the observed behavior.
X-ray imaging of the magnetic configuration of a three-dimensional artificial spin ice building block
Pip, Petai; Treves, Samuel; Massey, Jamie; et al. (2022)
APL Materials
The extension of artificial spin systems to the third dimension offers advances in functionalities and opportunities for technological applications. One of the main challenges facing their realization is the fabrication of three-dimensional geometries with nanoscale resolution. In this work, we combine two-photon lithography with deformation-free pyrolysis and a GdCo coating to create a three-dimensional (3D) tripod structure that represents a building block of an 3D artificial spin ice, surrounded by a two-dimensional magnetic film. We map the three-dimensional magnetic configuration of the structure and its surroundings using soft x-ray magnetic laminography. In this way, we determine the magnetic configuration of the tripod nanostructure to be in the low-energy two-in-one-out spin ice state, observed at the 2D vertex of a kagome ice and predicted for three-dimensional vertices of magnetic buckyball structures. In contrast to isolated vertices, the degeneracy of this state can be lifted by the surrounding film, which also offers a route toward the controlled injection of emergent charges. This demonstration of the building block of a 3D spin system represents the first step toward the realization and understanding of more complex 3D artificial spin systems.
Ferroelectric AlScN thin films with enhanced polarization and low leakage enabled by high-power impulse magnetron sputtering
Messi, Federica; Patidar, Jyotish; Rodkey, Nathan; et al. (2025)
APL Materials
The demand for efficient data processing motivates a shift toward in-memory computing architectures. Ferroelectric materials, particularly AlScN, show great promise for next-generation memory devices. However, their widespread application is limited due to challenges such as high coercive fields, leakage currents, and limited stability. Our work introduces a novel synthesis approach for ferroelectric AlScN thin films using high-power impulse magnetron sputtering (HiPIMS). Through a combinatorial study, we investigate the effect of scandium content and substrate bias on the ferroelectric properties of AlScN films deposited using metal-ion synchronized (MIS) HiPIMS. Leveraging the high ionization rates of HiPIMS and optimally timed substrate bias potentials, we enhance the adatom mobility at low temperatures. Our films exhibit a high degree of texture and crystallinity as well as low roughness at temperatures as low as 250 °C. Most importantly, the films exhibit coercive fields comparable to state-of-the-art values (5 MV/cm) with significantly enhanced remanent polarization (158–172 μC/cm2). Notably, the remanent polarization remains stable across varying scandium concentrations. We further evaluate cycling stability and leakage current to assess suitability for memory applications. This study demonstrates HiPIMS as a scalable and CMOS compatible technique for synthesizing high-quality ferroelectric AlScN films, paving the way for their application in non-volatile memory applications.
Role of the ferroelastic strain in the optical absorption of BiVO4
Hill, Christina; Weber, Mads C.; Lehmann, Jannis; et al. (2020)
APL Materials
Bismuth vanadate (BiVO4) has recently been under focus for its potential use in photocatalysis thanks to its well-suited absorption edge in the visible light range. Here, we characterize the optical absorption of a BiVO4 single crystal as a function of temperature and polarization direction by reflectance and transmittance spectroscopy. The optical bandgap is found to be very sensitive to the temperature, and to the tetragonal-to-monoclinic ferroelastic transition at 523 K. The anisotropy, as measured by the difference in the absorption edge for the light polarized parallel and perpendicular to the principal axis, is reduced from 0.2 eV in the high-temperature tetragonal phase to 0.1 eV at ambient temperature. We show that this evolution is dominantly controlled by the ferroelastic shear strain. These findings provide a route for further optimization of bismuth vanadate-based light absorbers in photocatalytic devices.
Emergent room temperature polar phase in CaTiO3 nanoparticles and single crystals
Ramirez, Mariola O.; Lummen, Tom T.A.; Carrasco, Irene; et al. (2019)
APL Materials
Polar instabilities are well known to be suppressed on scaling materials down to the nanoscale, when the electrostatic energy increase at surfaces exceeds lowering of the bulk polarization energy. Surprisingly, here we report an emergent low symmetry polar phase arising in nanoscale powders of CaTiO3, the original mineral named perovskite discovered in 1839 and considered nominally nonpolar at any finite temperature in the bulk. Using nonlinear optics and spectroscopy, X-ray diffraction, and microscopy studies, we discover a well-defined polar to non-polar transition at a TC = 350 K in these powders. The same polar phase is also seen as a surface layer in bulk CaTiO3 single crystals, forming striking domains with in-plane polarization orientations. Density functional theory reveals that oxygen octahedral distortions in the surface layer lead to the stabilization of the observed monoclinic polar phase. These results reveal new ways of overcoming the scaling limits to polarization in perovskites.

Publications1 - 10 of 26

Journal: APL Materials

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