Davide Soranzio


Last Name

Soranzio

First Name

Davide

ORCID

0000-0001-6190-3930

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2022 - 202515
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Publications 1 - 10 of 15
  • Influence of a MoS2 monolayer on the acoustic properties of silicon membranes
    Item type: Conference Poster
    Soranzio, Davide; Puntel, Denny; Tuniz, Manuel; et al. (2023)
  • Ultrafast all-optical manipulation of the charge-density wave in VTe₂
    Item type: Journal Article
    Tuniz, Manuel; Soranzio, Davide; Bidoggia, Davide; et al. (2023)
    Physical Review Research
    The charge-density-wave (CDW) phase in the layered transition-metal dichalcogenide VTe₂ is strongly coupled to the band inversion involving vanadium and tellurium orbitals. In particular, this coupling leads to a selective disappearance of the Dirac-type states that characterize the normal phase, when the CDW phase sets in. Here, we investigate the broadband time-resolved reflectivity variations caused by collective and single-particle excitations in the CDW ground state of VTe₂. With the aid of density functional perturbation theory simulations we unveil the presence of two collective amplitude modes of the CDW ground state. By applying a double-pulse excitation scheme, we show the possibility to manipulate these modes, gaining insights into the coupling between these two collective excitations and demonstrating a more efficient way to perturb the CDW phase in VTe₂.
  • Selective nanoscale thermoelastic response due to MoS2 monolayer deposition in silicon-based heterostructures
    Item type: Other Conference Item
    Soranzio, Davide; Puntel, Denny; Tuniz, Manuel; et al. (2023)
    Nanoscale Transport Phenomena Book of Abstract
  • Roles of band gap and Kane electronic dispersion in the THz-frequency nonlinear optical response in HgCdTe
    Item type: Conference Poster
    Soranzio, Davide; Abreu, Elsa; Houver, Sarah; et al. (2024)
  • Temperature- and field-dependent nonlinear 2D THz response in Hg1-xCdxTe
    Item type: Conference Poster
    Soranzio, Davide; Abreu, Elsa; Dössegger, Janine; et al. (2022)
  • Impact of MoS2 Monolayers on the Thermoelastic Response of Silicon Heterostructures
    Item type: Journal Article
    Soranzio, Davide; Puntel, Denny; Tuniz, Manuel; et al. (2024)
    ACS Applied Nano Materials
    Understanding the thermoelastic response of a nanostructure is crucial for the choice of materials and interfaces in electronic devices with improved and tailored transport properties at the nanoscale. Here, we show how the deposition of a MoS2 monolayer can strongly modify the nanoscale thermoelastic dynamics of silicon substrates close to their interface. We demonstrate this by creating a transient grating with extreme ultraviolet light, using ultrashort free-electron laser pulses, whose ≈84 nm period is comparable to the size of elements typically used in nanodevices, such as electric contacts and nanowires. The thermoelastic response, featuring coherent acoustic waves and incoherent relaxation, is tangibly modified by the presence of monolayer MoS2. Namely, we observed a major reduction of the amplitude of the surface mode, which is almost suppressed, while the longitudinal mode is basically unperturbed, aside from a faster decay of the acoustic modulations. We interpret this behavior as a selective modification of the surface elasticity, and we discuss the conditions to observe such effect, which may be of immediate relevance for the design of Si-based nanoscale devices.
  • THz-induced carrier multiplication in TaAs Weyl semimetal
    Item type: Conference Paper
    Houver, Sarah; Soranzio, Davide; Biasco, Simone; et al. (2023)
    2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
    Topological Dirac and Weyl semimetals (D&W SM) have attracted a lot of attention due to their unusual electronic properties, which are strongly dependent on the symmetry of the system. By altering the symmetry of the lattice, using for example a pulse of light, one can expect to modify their topological nature and induce/suppress the related properties "on demand". High-field Terahertz (THz) radiation that interacts with vibrational states under near-resonant conditions is a promising pump candidate to induce structural changes in D& W SM compounds, possibly leading to topological transient or permanent changes. There are, however, some challenges to achieving such control. D&W SM have a specific band structure showing a 3D-linear dispersion around nodes, which makes them sensitive to THz-induced carrier multiplication. These carrier multiplication processes can compete with and ultimately screen the interaction of the THz light with vibrational modes. Here, we present recent results of 2D-THz spectroscopy of a bulk Weyl semimetal TaAs in reflection. We highlight THz-induced carrier multiplication effects and study the field and temperature dependence of the number of carriers induced by the THz field. We examine possible carrier multiplication mechanisms which could be involved.
  • Roles of band gap and Kane electronic dispersion in the THz-frequency nonlinear optical response in HgCdTe
    Item type: Other Conference Item
    Soranzio, Davide; Abreu, Elsa; Houver, Sarah; et al. (2024)
  • Strong modulation of carrier effective mass in WTe2 via coherent lattice manipulation
    Item type: Journal Article
    Soranzio, Davide; Savoini, Matteo; Beaud, Paul; et al. (2022)
    npj 2D Materials and Applications
    The layered transition-metal dichalcogenide WTe2 is characterized by distinctive transport and topological properties. These properties are largely determined by electronic states close to the Fermi level, specifically to electron and hole pockets in the Fermi sea. In principle, these states can be manipulated by changes to the crystal structure. The precise impact of particular structural changes on the electronic properties is a strong function of the specific nature of the atomic displacements. Here, we report on time-resolved X-ray diffraction and infrared reflectivity measurements of the coherent structural dynamics in WTe2 induced by femtosecond laser pulses excitation (central wavelength 800 nm), with emphasis on a quantitative description of both in-plane and out-of-plane vibrational modes. We estimate the magnitude of these motions, and calculate via density functional theory their effect on the electronic structure. Based on these results, we predict that phonons periodically modulate the effective mass of carriers in the electron and hole pockets up to 20%. This work opens up new opportunities for modulating the peculiar transport properties of WTe2 on short time scales.
  • Phase transition driven by ultrashort laser pulses in the charge-density-wave material K0.3MoO3
    Item type: Other Conference Item
    Winkler, Rafael; Boie, Larissa; Deng, Yiwei; et al. (2023)
Publications 1 - 10 of 15