Jonas Heidrich

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Heidrich

First Name

Jonas

ORCID

0000-0002-2656-0933

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Publications1 - 10 of 59

Full optical SESAM characterization methods in the 1.9 to 3-µm wavelength regime
Heidrich, Jonas; Gaulke, Marco; Alaydin, Özgür; et al. (2021)
Optics Express
50-W, >2-μJ SESAM-modelocked Ho:YAG thin-disk oscillator at 2.1 μm
Tomilov, Sergei; Wang, Yicheng; Hoffmann, Martin; et al. (2022)
EPJ Web of Conferences ~ 10th EPS-QEOD Europhoton Conference on Solid-State, Fibre, and Waveguide Coherent Light Sources (EUROPHOTON 2022)
High-speed interband cascade infrared photodetectors: Photo-response saturation by a femtosecond oscillator
Krüger, Léonard M.; Hillbrand, Johannes; Heidrich, Jonas; et al. (2021)
Optics Express
Interband cascade infrared photodetectors (ICIPs) combine interband optical transitions with fast intraband transport to achieve high-frequency and broad-wavelength operation at room temperature. Here we study the bias-dependent electronic impulse response of ICIPs with a mid-infrared synchronously pumped optical parametric oscillator (OPO). Since the OPO produces ultrashort 104-fs pulses, it is possible to probe the impulse response of the ICIP. From this impulse response, we identify two characteristic decay times, indicating the contribution of electron as well as hole carriers. A reverse bias voltage applied to the ICIP reduces both time scales and leads to an increased electrical cut-off frequency. The OPO emits up to 500 mW average power, of which up to 10 mW is directed to the ICIP in order to test its saturation characteristics under short-pulse illumination. The peak of the impulse response profile as well as the average photocurrent experience a gradual saturation behavior, and we determine the corresponding saturation powers by measuring the photo-response as a function of average power directed to the ICIP. We demonstrate that an increasing reverse bias increases the saturation power as well as the responsivity of the ICIP.
Towards 2-µm high-power ultrafast thin-disk lasers
Wang, Yicheng; Yomilov, Sergei; Hoffmann, Martin; et al. (2021)
Thermal management in 2-µm InGaSb VECSEL using a hybrid-metal Bragg mirror
Huwyler, Nicolas; Gaulke, Marco; Heidrich, Jonas; et al. (2022)
Proceedings of SPIE ~ Vertical External Cavity Surface Emitting Lasers (VECSELs) XI
The key limiting factor for output power scaling of VECSELs is the thermal resistance of the structure owing to the DBR thickness and the heat conductivity of the semiconductor materials. We have successfully fabricated a flip-chip processed GaSb/AlAs0.08Sb0.92 hybrid DBR for 2 µm with only 7.5 mirror pairs and a 100-nm gold layer. The hybrid DBR reaches a high reflectivity >99.5% with a reduced total thickness of 2.3 µm. The measured spectral reflectivity of the hybrid DBR reveals a clear gold layer and matches theoretical simulations. High power 2-µm VECSEL development with the presented hybrid-mirror structure is under way.
50-W average power Ho:YAG SESAM-modelocked thin-disk oscillator at 2.1 µm
Tomilov, Sergei; Wang, Yicheng; Hoffmann, Martin; et al. (2022)
Optics Express
Ultrafast laser systems operating with high-average power in the wavelength range from 1.9 µm to 3 µm are of interest for a wide range of applications for example in spectroscopy, material processing and as drivers for secondary sources in the XUV spectral region. In this area, laser systems based on holmium-doped gain materials directly emitting at 2.1 µm have made significant progress over the past years, however so far only very few results were demonstrated in power-scalable high-power laser geometries. In particular, the thin-disk geometry is promising for directly modelocked oscillators with high average power levels that are comparable to amplifier systems at MHz repetition rate. In this paper, we demonstrate semiconductor saturable absorber mirror (SESAM) modelocked Ho:YAG thin-disk lasers (TDLs) emitting at 2.1-µm wavelength with record-holding performance levels. In our highest average power configuration, we reach 50 W of average power, with 1.13-ps pulses, 2.11 µJ of pulse energy and ∼1.9 MW of peak power. To the best of our knowledge, this represents the highest average power, as well as the highest output pulse energy so far demonstrated from a modelocked laser in the 2-µm wavelength region. This record performance level was enabled by the recent development of high-power GaSb-based SESAMs with low loss, adapted for high intracavity power and pulse energy. We also explore the limitations in terms of reaching shorter pulse durations at high power with this gain material in the disk geometry and using SESAM modelocking, and present first steps in this direction, with the demonstration of 30 W of output power, with 692-fs pulses in another laser configuration. In the near future, with the development of a next generation of SESAM samples for this wavelength region, we believe higher pulse energy approaching the 10-µJ regime, and sub-500-fs pulses should be straightforward to reach using SESAM modelocking.
First SESAM-modelocked VECSEL without intracavity heatspreaders at a center wavelength of around 2 µm
Heidrich, Jonas; Gaulke, Marco; Alaydin, Özgür; et al. (2022)
Proceedings of SPIE ~ Vertical External Cavity Surface Emitting Lasers (VECSELs) XI
We present our first flip-chip processed, modelocked InGaSb vertical external-cavity surface-emitting laser (VECSEL) in the 2-µm wavelength range. The optically pumped VECSEL is passively modelocked with a semiconductor saturable absorber mirror (SESAM) resulting in 2.7-ps pulses with 89-mW average output power at a center wavelength of 2063 nm and a pulse repetition rate of 1.96 GHz. The standing-wave V-shaped cavity is formed by a 1% output coupler, a VECSEL gain chip as a folding cavity mirror, and a SESAM as the end mirror. An intracavity 1.5-mm silicon plate at Brewster’s angle was used for dispersion compensation and a fixed polarization.
High-power Ho:YAG thin-disk laser and first SESAM modelocking
Tomilov, Sergei; Hoffmann, Martin; Heidrich, Jonas; et al. (2020)
OSA Technical Digest ~ Laser Congress 2020 (ASSL, LAC)
We demonstrate a Ho:YAG thin-disk oscillator operating in fundamental-mode continous-wave regime delivering a record output power of 96 W and present first GaSb-SESAM-modelocking results.
Full Mid-Infrared Characterization of InGaSb SESAMs
Heidrich, Jonas; Gaulke, Marco; Alaydin, Özgür; et al. (2021)
OSA Technical Digest ~ Conference on Lasers and Electro-Optics
We present high-precision (<0.04%) nonlinear reflectivity and pump-probe setups to characterize mid-infrared InGaSb quantum-well-based SESAMs at 2.05 µm. The SESAMs show modulation depths between 1-2.2%, low saturation fluences, low non-saturable losses and fast recovery times.
1-Watt SESAM-Modelocked fs-Cr:ZnS Oscillator at 2.4 µm
Barh, Ajanta; Alaydin, B. Ozgur; Heidrich, Jonas; et al. (2021)
2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)
Cr:ZnS lasers delivering mid-infrared (mid-IR) femtosecond (fs) pulses directly from an oscillator have seen a substantial progress in research over the last decade [1] , [2] . Both power and pulse width scaling have been the main focus of the research. Such lasers are especially useful to drive efficient nonlinear processes to generate broadband long-wave infrared sources for high-sensitivity spectroscopy in the molecular fingerprint region [3] . Current state-of-the-art fs-Cr:ZnS lasers are based on Kerr-lens modelocking (KLM), where few-cycle pulses and watt-level average power have been achieved [2] , [4] . While KLM is suitable for few-cycle pulses, SESAM modelocking offers several other advantages including self-starting low-noise modelocking, robust laser cavities, and potential for a wide range of repetition rates ( f rep ). However, the lack of suitable mid-IR SESAMs has limited the average power to below 200 mW for femtosecond SESAM-modelocked Cr:ZnS lasers. In this work, we have developed a novel high-performance type-I InGaSb/GaSb quantum well (QW) SESAM, and demonstrate Cr:ZnS laser at 2.37 µm delivering 120 fs pulses at 1 watt average output power with f rep of 250 MHz. Similar laser performance is achieved even when the laser cavity is shortened to deliver fundamental modelocking pulses at f rep of 500 MHz.

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Jonas Heidrich

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