Muon Interaction with Negative-U and High-Spin-State Defects: Differentiating between C and Si Vacancies in 4H-SiC
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2020-11
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Journal Article
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Abstract
Low-energy muon-spin-rotation spectroscopy (LE-μ SR) is employed to study silicon and carbon vacancies in proton-irradiated 4H-Si C. We show that the implanted muon is quickly attracted to the negative Si vacancy (V Si), where it forms a paramagnetic muonium (Mu0) state, resulting in a reduction of the diamagnetic fraction. In samples with predominantly C vacancies (VC), on the other hand, the formation of Mu0 is very short lived and the muon quickly captures a second electron to form a diamagnetic Mu− state. The results are corroborated by density-functional calculations, where significant differences in the relaxation mechanism of the nearest-neighbor dangling bonds of the vacancies are discussed. We propose that the LE-μ SR technique is capable of differentiating between high-spin and negative-U behavior in semiconducting materials. Finally, our findings emphasize the large potential of LE-μ SR to probe near-surface semiconductor defects, a capability that is crucial for further development of many electronic and quantum technology applications.
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published
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14 (5)
Pages / Article No.
54053
Publisher
American Physical Society
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09480 - Grossner, Ulrike / Grossner, Ulrike