Analysis of temperature-dependent optical gain in GaN-InGaN quantum-well structures
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Date
2006-08
Publication Type
Journal Article
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Abstract
The temperature dependent spectral gain in InGaN-GaN multiple quantum-well structures with 10% In content is investigated. Mode gain is measured in a temperature range between 239 K and 312 K using the Hakki-Paoli technique and compared to simulations. The simulation accounts for temperature-dependent polarization dephasing, and hence homogeneous broadening, in a rigorous fashion, without any fit parameter. It is found that the evolution of the gain spectrum with temperature at different drive currents can be modeled using a temperature-independent single value for inhomogeneous broadening. The resulting compositional fluctuations are compared to structural measurements.
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published
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Journal / series
Volume
18 (15)
Pages / Article No.
1600 - 1602
Publisher
IEEE
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Subject
InGaN-GaN laser diode (LD); inhomogeneous broadening; microscopic gain model; optical gain
Organisational unit
03675 - Witzigmann, Bernd (ehemalig)