Frequency dependent polarisation switching in h-ErMnO3
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2018-04-30
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Journal Article
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Abstract
We report an electric-field poling study of the geometrically-driven improper ferroelectric h-ErMnO3. From a detailed dielectric analysis, we deduce the temperature and the frequency dependent range for which single-crystalline h-ErMnO3 exhibits purely intrinsic dielectric behaviour, i.e., free from the extrinsic so-called Maxwell-Wagner polarisations that arise, for example, from surface barrier layers. In this regime, ferroelectric hysteresis loops as a function of frequency, temperature, and applied electric fields are measured, revealing the theoretically predicted saturation polarisation on the order of 5–6 μC/cm2. Special emphasis is put on frequency dependent polarisation switching, which is explained in terms of domain-wall movement similar to proper ferroelectrics. Controlling the domain walls via electric fields brings us an important step closer to their utilization in domain-wall-based electronics.
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published
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112 (18)
Pages / Article No.
182908
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American Institute of Physics
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03918 - Fiebig, Manfred / Fiebig, Manfred
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149192 - Functional active defects in condensed-matter systems (SNF)
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