A nonparabolicity model compared to tight-binding: The case of square silicon quantum wires
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Date
2007
Publication Type
Other Conference Item
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yes
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Abstract
The aim of this work is to elaborate a method which is capable to improve the results of the EMA without loosing its time efficiency. Given a fixed device configuration and calculated quantities such as currents from an atomistic simulation, the method should reproduce these results by means of simple tuning parameters. For this purpose we consider a nonparabolicity (NP) model used by Trellakis et. al. (2002). This model turns out to be treatable within the same transport model as we use for the EMA thus maintaining a reasonable time efficiency.
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Publication status
published
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Editor
Book title
2007 International Semiconductor Device Research Symposium
Journal / series
Volume
2
Pages / Article No.
429 - 430
Publisher
IEEE
Event
2007 International Semiconductor Device Research Symposium (ISDRS 2007)