Operation and performance limits of MOS controlled semiconductor power devices
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Date
1995
Publication Type
Doctoral Thesis
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yes
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published
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Examiner : Fichtner, Wolfgang
Examiner : Jaecklin, André August
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ETH Zürich
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LEISTUNGSELEKTRONIK; HALBLEITERBAUELEMENTE + ELEKTRONISCHE BAUELEMENTE (ELEKTRONIK); BIPOLARE METALOXIDHALBLEITER, BIMOS (HALBLEITERTECHNOLOGIE); ABSCHALTTHYRISTOREN, GTO (ELEKTRONIK); INSULATED-GATE-BIPOLAR-TRANSISTOREN, IGBT (ELEKTRONIK); METAL OXIDE SEMICONDUCTOR-TRANSISTOREN, MOS (ELEKTRONIK); LEISTUNGSHALBLEITER (ELEKTRONIK); MOS GESTEUERTE THYRISTOREN, MCT (ELEKTRONIK); POWER ELECTRONICS; SEMICONDUCTOR COMPONENTS + ELECTRONIC COMPONENTS (ELECTRONICS); BIPOLAR METAL OXIDE SEMICONDUCTORS, BIMOS (SEMICONDUCTOR TECHNOLOGY); GATE TURN-OFF THYRISTORS, GTO (ELECTRONICS); INSULATED-GATE-BIPOLAR-TRANSISTORS, IGBT (ELECTRONICS); METAL OXIDE SEMICONDUCTOR TRANSISTORS, MOS (ELECTRONICS); POWER SEMICONDUCTORS (ELECTRONICS); MOS CONTROLLED THYRISTORS, MCT (ELECTRONICS)
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Notes
Diss. Techn. Wiss. ETH Zürich, Nr. 10819, 1995. Ref.: W. Fichtner ; Korref.: A. Jaecklin.