A MOS capacitor model for ultra-thin 2D semiconductors: The impact of interface defects and channel resistance
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Author / Producer
Date
2020-07
Publication Type
Journal Article
ETH Bibliography
yes
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Publication status
published
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Journal / series
Volume
7 (3)
Pages / Article No.
35018
Publisher
IOP Publishing
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Edition / version
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Software
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Date collected
Date created
Subject
2D capacitance; MX2 capacitor model; channel resistance; Dit; MoS2; interface defects; edge MOS capacitor