Structural characterization of thick, high-quality epitaxial Ge on Si substrates grown by low-energy plasma-enhanced chemical vapor deposition
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Author / Producer
Date
2003-09
Publication Type
Journal Article
ETH Bibliography
yes
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Publication status
published
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Book title
Journal / series
Volume
32 (9)
Pages / Article No.
976 - 980
Publisher
Springer
Event
Edition / version
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Software
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Date collected
Date created
Subject
SiGe; Graded buffer; Threading dislocation; Optoelectronics