Elemental Topological Insulator with Tunable Fermi Level: Strained α-Sn on InSb(001)
METADATA ONLY
Loading...
Author / Producer
Date
2013-10-11
Publication Type
Journal Article
ETH Bibliography
yes
Citations
Altmetric
METADATA ONLY
Data
Rights / License
Abstract
We report on the epitaxial fabrication and electronic properties of a topological phase in strained α-Sn on InSb. The topological surface state forms in the presence of an unusual band order not based on direct spin-orbit coupling, as shown in density functional and GW slab-layer calculations. Angle-resolved photoemission including spin detection probes experimentally how the topological spin-polarized state emerges from the second bulk valence band. Moreover, we demonstrate the precise control of the Fermi level by dopants. © 2013 American Physical Society.
Permanent link
Publication status
published
Editor
Book title
Journal / series
Volume
111 (15)
Pages / Article No.
157205
Publisher
American Physical Society