Extended Analysis of Power Cycling Behavior of TOPackaged SiC Power MOSFETs
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Date
2023
Publication Type
Conference Paper
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yes
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Abstract
This paper presents an extended analysis of TOpackaged SiC power MOSFETs after power cycling (PC) tests. Namely, it is shown that initially present voids in soft lead-based solder die attach disappear not only after certain number of active PC tests, but also after thermal shock tests. Hereby, the conclusion that solder die attach is not the weak spot of SiC power MOSFET packages with an epoxy mold compound (EMC) encapsulation is further supported. Furthermore, an electro-thermo-mechanical (ETM) model developed in-house is used to correlate the dominant wear-out failure of bond wires to the PC test parameters such as heating current, temperature amplitude, and heating on-time, as well as to the thickness of top source die metallization.
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Publication status
published
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Book title
2023 IEEE International Reliability Physics Symposium (IRPS)
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Pages / Article No.
10117650
Publisher
IEEE
Event
61st IEEE International Reliability Physics Symposium (IRPS 2023)
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Subject
power cycling; SiC power MOSFETs; FEM; modeling; solder; TO-package; bond wires
Organisational unit
09480 - Grossner, Ulrike / Grossner, Ulrike