Influence of DX centers on the performance of unipolar semiconductor lasers based on GaAs-AlxGa1-xAs
METADATA ONLY
Author / Producer
Date
1999
Publication Type
Journal Article
ETH Bibliography
no
Citations
Altmetric
METADATA ONLY
Data
Rights / License
Permanent link
Publication status
published
External links
Editor
Book title
Journal / series
Volume
11 (9)
Pages / Article No.
1090 - 1092
Publisher
IEEE
Event
Edition / version
Methods
Software
Geographic location
Date collected
Date created
Subject
Organisational unit
03759 - Faist, Jérôme / Faist, Jérôme