Ultra compact electrochemical metallization cells offering reproducible atomic scale memristive switching
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Date
2019-03-07
Publication Type
Journal Article
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yes
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Abstract
Here we show electrochemical metallization cells with compact dimensions, excellent electrical performance, and reproducible characteristics. An advanced technology platform has been developed to obtain Ag/SiO2/Pt devices with ultra-scaled footprints (15 × 15 nm2), inter-electrode distances down to 1 nm, and a transition from the OFF to ON resistance state relying on the relocation of only few atoms. This technology permits a well-controlled metallic filament formation in a highly confined field at the apex of an atomic scale tip. As a consequence of this miniaturization process, we achieve set voltages around 100 mV, ultra-fast switching times of 7.5 ns, and write energies of 18 fJ. Furthermore, we demonstrate very good cell-to-cell uniformity and a resistance extinction ratio as high as 6 · 105. Combined ab-initio quantum transport simulations and experiments suggest that the manufactured structures exhibit reduced self-heating effects due to their lower dimensions, making them very promising candidates as next-generation (non-)volatile memory components.
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published
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2
Pages / Article No.
28
Publisher
Springer
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03974 - Leuthold, Juerg / Leuthold, Juerg
03925 - Luisier, Mathieu / Luisier, Mathieu
02635 - Institut für Elektromagnetische Felder / Institute of Electromagnetic Fields