Electroluminescence from strain-compensated Si0.2Ge0.8/Si quantum-cascade structures based on a bound-to-continuum transition
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Date
2002
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Journal Article
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Abstract
The intersubband electroluminescence from strain-compensated Si0.2Ge0.8/Si quantum cascade (QC) structures was discussed. The design of the active region of QC structure was based on a bound-to-continuum transition. The results showed that strain compensated structures were found to be a solution to the strong limitation of both the complexity of design encountered with the QC structures grown pseudomorphically on Si substrates and the number of periods.
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published
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81 (25)
Pages / Article No.
4700 - 4702
Publisher
American Institute of Physics
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03759 - Faist, Jérôme / Faist, Jérôme