Picosecond Femtojoule Resistive Switching in Nanoscale VO2 Memristors
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2024-11
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Other Conference Item
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Abstract
Beyond-Moore computing technologies are expected to provide a sustainable alternative to the von Neumann approach not only by their down-scaling potential but also via exploiting device-level functional complexity at the lowest possible energy consumption. The dynamics of the Mott transition in correlated electron oxides, such as vanadium dioxide, has been identified as a rich and reliable source of such functional complexity. However, its full potential in high-speed and low-power operation has been largely unexplored.
We studied nanoscale VO2 devices in a broad-band setup to reveal the speed and energy limitations of their resistive switching operation. Our picosecond time-resolution, real-time resistive switching experiments and numerical simulations demonstrate that tunable low-resistance states can be set by the application of 20 ps long, <1.7 V amplitude voltage pulses at 15 ps incubation times and switching energies starting from 1 fJ. Moreover, we demonstrate that at nanometer-scale device sizes not only the electric field induced insulator-to-metal transition is ultra-fast, but also the thermal conduction limited metal-to-insulator transition can take place at timescales of 100's of picoseconds. These orders of magnitude breakthroughs open the route to the design of high-speed and low-power dynamical circuits for a plethora of neuromorphic computing applications from pattern recognition to numerical optimization.
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7th International Conference on Memristive Materials, Devices & Systems (MEMRISYS 2024)
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03974 - Leuthold, Juerg / Leuthold, Juerg
02635 - Institut für Elektromagnetische Felder / Institute of Electromagnetic Fields