Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs
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Author / Producer
Date
2020-07
Publication Type
Conference Paper
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yes
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Abstract
Heavy-ion microbeams are employed for probing the radiation-sensitive regions in commercial silicon carbide (SiC) vertical double-diffused power (VD)-MOSFETs with micrometer accuracy. By scanning the beam spot over the die, a spatial periodicity was observed in the leakage current degradation, reflecting the striped structure of the power MOSFET investigated. Two different mechanisms were observed for degradation. At low drain bias (gate and source grounded), only the gate-oxide (at the JFET or neck region) is contributing in the ion-induced leakage current. For exposures at drain–source bias voltages higher than a specific threshold, additional higher drain leakage current is observed in the p-n junction region. This provides useful insights into the understanding of basic phenomena of single-event effects in SiC power devices.
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Publication status
published
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Book title
Journal / series
Volume
67 (7)
Pages / Article No.
1381 - 1389
Publisher
IEEE
Event
Conference on Radiation and its Effects on Components and Systems (RADECS 2019)
Edition / version
Methods
Software
Geographic location
Date collected
Date created
Subject
Heavy ion; leakage current degradation; microbeam; silicon carbide (SiC) vertical double-diffused power(VD)-MOSFET; single-event effect (SEE); single-event leakage current (SELC)
Organisational unit
09480 - Grossner, Ulrike / Grossner, Ulrike