Emitter size effects and scalability of GaInP/GaAsSb/InP DHBTS
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Author / Producer
Date
2008
Publication Type
Conference Paper
ETH Bibliography
yes
Citations
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Data
Rights / License
Permanent link
Publication status
published
External links
Editor
Book title
2008 IEEE 20th International Conference on Indium Phosphide & Related Materials
Journal / series
Volume
Pages / Article No.
79 - 81
Publisher
IEEE
Event
20th International Conference on Indium Phosphide and Related Materials
Edition / version
Methods
Software
Geographic location
Date collected
Date created
Subject
Double heterojunction bipolar transistors (DHBTs); GaAsSb; Band discontinuities; Current gain; Emitter size effects; Recombination current; Arsenic mole fraction
Organisational unit
03472 - Professur für Feldtheorie (ehemalig)
03721 - Bolognesi, Colombo / Bolognesi, Colombo