MOS controlled power devices for high voltage application
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Author / Producer
Date
1994
Publication Type
Doctoral Thesis
ETH Bibliography
yes
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published
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Contributors
Examiner : Fichtner, Wolfgang
Examiner : Hugel, Jörg
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Journal / series
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Pages / Article No.
Publisher
ETH Zürich
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Edition / version
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Date collected
Date created
Subject
METAL OXIDE SEMICONDUCTOR-TRANSISTOREN, MOS (ELEKTRONIK); TRANSISTOREN/TEGFET, VFET, MODFET, MOSFET, MESFET, SGFET, ISFET, MISFET, HFET, JFET, CIGFET, POSFET (ELEKTRONIK); INSULATED-GATE-BIPOLAR-TRANSISTOREN, IGBT (ELEKTRONIK); ABSCHALTTHYRISTOREN, GTO (ELEKTRONIK); LEISTUNGSELEKTRONIK; HOCHSPANNUNG, BIS 400 KV (ELEKTROTECHNIK); MOS GESTEUERTE THYRISTOREN, MCT (ELEKTRONIK); METAL OXIDE SEMICONDUCTOR TRANSISTORS, MOS (ELECTRONICS); TRANSISTORS/TEGFET, VFET, MODFET, MOSFET, MESFET, SGFET, ISFET, MISFET, HFET, JFET, CIGFET, POSFET (ELECTRONICS); INSULATED-GATE-BIPOLAR-TRANSISTORS, IGBT (ELECTRONICS); GATE TURN-OFF THYRISTORS, GTO (ELECTRONICS); POWER ELECTRONICS; HIGH VOLTAGE, UP TO 400 KV (ELECTRICAL ENGINEERING); MOS CONTROLLED THYRISTORS, MCT (ELECTRONICS)
Organisational unit
Notes
Diss. Techn. Wiss. ETH Zürich, Nr. 10825, 1994. Ref.: W. Fichtner ; Korref.: J. Hugel.