Versatile Nanoscale Three-Terminal Memristive Switch Enabled by Gating
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Date
2024-04-23
Publication Type
Journal Article
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Abstract
A three-terminal memristor with an ultrasmall footprint of only 0.07 mu m(2) and critical dimensions of 70 nm x 10 nm x 6 nm is introduced. The device's feature is the presence of a gate contact, which enables two operation modes: either tuning the set voltage or directly inducing a resistance change. In I-V mode, we demonstrate that by changing the gate voltages between +/- 1 V one can shift the set voltage by 69%. In pulsing mode, we show that resistance change can be triggered by a gate pulse. Furthermore, we tested the device endurance under a 1 kHz operation. In an experiment with 2.6 million voltage pulses, we found two distinct resistance states. The device response to a pseudorandom bit sequence displays an open eye diagram and a success ratio of 97%. Our results suggest that this device concept is a promising candidate for a variety of applications ranging from Internet-of-Things to neuromorphic computing.
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published
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Journal / series
Volume
18 (16)
Pages / Article No.
10798 - 10806
Publisher
American Chemical Society
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Subject
memristor; memristive switching; three-terminal; gating; electrochemical cells; Electrodes; Filaments; Ions; Memristors; Platinum
Organisational unit
03974 - Leuthold, Juerg / Leuthold, Juerg
03925 - Luisier, Mathieu / Luisier, Mathieu
02635 - Institut für Elektromagnetische Felder / Institute of Electromagnetic Fields