Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures
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Author / Producer
Date
2005-10
Publication Type
Journal Article
ETH Bibliography
yes
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Publication status
published
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Journal / series
Volume
52 (10)
Pages / Article No.
2290 - 2299
Publisher
IEEE
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Subject
Electrostatic discharge (ESD) events; High-temperature device characterization; Impact-ionization; Non-equilibrium Auger effect; Predictive TCAD tools
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Notes
Received 11 March 2005, Revised 20 July 2005, Published online 19 September 2005.