Measuring Dielectric and Electro-optic Responses of Thin Films using Plasmonic Devices
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Date
2024-01-29
Publication Type
Journal Article
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yes
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Abstract
This paper introduces a simple method for the measurement of the relative permittivity and the Pockels coefficient of electro-optic (EO) materials in a waveguide up to sub-THz frequencies. By miniaturizing the device and making use of plasmonics, the complexities of traditional methods are mitigated. This work elaborates the fabrication tolerance and simplicity of the method, and highlights its applicability to various materials, substrates and configurations. The method is showcased using drop-casted perovskite barium titanate (BaTiO3, BTO) nano-particle thin-films and it has previously been used to measure epitaxial thin film BTO. In this work we show the effective relative permittivity of drop casted BTO to be εeff ∼ 30 at 200 MHz, dropping to ∼ 18 at 67 GHz and similarly, the effective Pockels coefficient was found to be reff ∼ 16 at 350 MHz and ∼ 8 at 70 GHz. These values are a factor > 50 below the values found for thin film BTO. Yet, the fact that the method can be applied to such different samples and Pockels strengths gives testimony to its versatility and sensitivity.
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published
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Journal / series
Volume
32 (3)
Pages / Article No.
4511 - 4524
Publisher
Optica
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Methods
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Date created
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Organisational unit
03974 - Leuthold, Juerg / Leuthold, Juerg
02635 - Institut für Elektromagnetische Felder / Institute of Electromagnetic Fields
Notes
Funding
208094 - Nonlinear Pockels Materials for Nanoscale Devices (SNF)
871391 - Energy- and Size-efficient Ultra-fast Plasmonic Circuits for Neuromorphic Computing Architectures (EC)
871658 - Neuro-augmented 112Gbaud CMOS plasmonic transceiver platform for Intra- and Inter-DCI (EC)
871391 - Energy- and Size-efficient Ultra-fast Plasmonic Circuits for Neuromorphic Computing Architectures (EC)
871658 - Neuro-augmented 112Gbaud CMOS plasmonic transceiver platform for Intra- and Inter-DCI (EC)