Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effects
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Author / Producer
Date
2003-02
Publication Type
Journal Article
ETH Bibliography
yes
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Publication status
published
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Book title
Journal / series
Volume
50 (2)
Pages / Article No.
278 - 284
Publisher
IEEE
Event
Edition / version
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Software
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Date collected
Date created
Subject
Ballistic transport; Monte Carlo methods; MOSFET scaling; Strained silicon; Velocity overshoot
Organisational unit
Notes
Published online 29 April 2003.