Under-the-Barrier Model: An Extension of the Top-of-the-Barrier Model to Efficiently and Accurately Simulate Ultrascaled Nanowire Transistors
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Author / Producer
Date
2013-07
Publication Type
Journal Article
ETH Bibliography
yes
Citations
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Rights / License
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Publication status
published
External links
Editor
Book title
Journal / series
Volume
60 (7)
Pages / Article No.
2353 - 2360
Publisher
IEEE
Event
Edition / version
Methods
Software
Geographic location
Date collected
Date created
Subject
Device simulation; Intraband tunneling; Nanowire transistor; Top-of-the-barrier (ToB) model
Organisational unit
03925 - Luisier, Mathieu / Luisier, Mathieu
Notes
Funding
133591 - Physics-based Modeling of Electronic Devices at the Nanometer Scale (SNF)