Optical absorption in silicon layers in the presence of charge inversion/accumulation or ion implantation
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2013-07-29
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Journal Article
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Abstract
We determine the optical losses in gate-induced charge accumulation/ inversion layers at a Si/SiO2 interface. Comparison between gate-induced charge layers and ion-implanted thin silicon films having an identical sheet resistance shows that optical losses can be significantly lower for gate-induced layers. For a given sheet resistance, holes produce higher optical loss than electrons. Measurements have been performed at λ = 1550 nm.
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103 (5)
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51104
Publisher
American Institute of Physics
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03974 - Leuthold, Juerg / Leuthold, Juerg