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Processing-induced Defects in 4H-SiC: Depth-Resolved Characterization Using Low-Energy Muon Spin Spectroscopy
EMBARGOED UNTIL 2029-03-03
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Author / Producer
Date
2025
Publication Type
Doctoral Thesis
ETH Bibliography
yes
Citations
Altmetric
EMBARGOED UNTIL 2029-03-03
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Publication status
published
External links
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Journal / series
Volume
Pages / Article No.
Publisher
ETH Zurich
Event
Edition / version
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Software
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Date collected
Date created
Subject
Silicon Carbide (SiC); Muon-spin relaxation/rotation (μ+SR); Low-energy muons; Defect characterization; Muonium
Organisational unit
09480 - Grossner, Ulrike / Grossner, Ulrike
Notes
Funding
192218 - Understanding processing-induced defects to improve semiconductor device manufacturing technology (SNF)