Impact ionization rate calculations for device simulation
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Author / Producer
Date
2005
Publication Type
Master Thesis
ETH Bibliography
yes
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published
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Publisher
ETH, Eidgenössische Technische Hochschule Zürich, Integrated Systems Laboratory
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Subject
IONISATIONSVORGÄNGE IN FESTKÖRPERN (ELEKTRODYNAMIK); BANDMODELL + BÄNDERSTRUKTUR (PHYSIK DER KONDENSIERTEN MATERIE); SILICIUM (CHEMISCHE ELEMENTE); NUMERISCHE SIMULATION UND MATHEMATISCHE MODELLRECHNUNG; STOCHASTISCHE APPROXIMATION + MONTE-CARLO-METHODEN (STOCHASTIK); IONIZATION PHENOMENA IN SOLIDS (ELECTRODYNAMICS); BAND MODEL + BAND STRUCTURE (CONDENSED MATTER PHYSICS); SILICON (CHEMICAL ELEMENTS); NUMERICAL SIMULATION AND MATHEMATICAL MODELING; STOCHASTIC APPROXIMATION + MONTE CARLO METHODS (STOCHASTICS)
Organisational unit
02636 - Institut für Integrierte Systeme / Integrated Systems Laboratory
Notes
Diplomarbeit, Eidgenössische Technische Hochschule Zürich, 2005.