Ferroelectric Thin Films for Oxide Electronics


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Date

2023-03-28

Publication Type

Review Article

ETH Bibliography

yes

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Data

Abstract

Ferroelectric materials have set in motion numerous ultralow-energy-consuming device concepts that can be integrated into state-of-the-art complementary metal–oxide–semiconductor technology. Their nonvolatile, spontaneous electric polarization makes them promising candidates to control functionalities at the nanoscale with energy-efficient electric fields only. In this spotlight article, we start with a brief introduction to ferroelectric materials, the challenges involving the design of thin films and review the state-of-the-art of their integration into various electronic applications. Revolutionary in situ and operando diagnostic tools allowing the monitoring of the technology-relevant polarization state during the material design, or its operation will be detailed. Concepts such as chiral states in ferroelectrics and neuromorphic-type switching will be addressed to provide a comprehensive view on the evolution of ferroelectric states for the next generation of low-energy-consuming electronics. Finally, we discuss the most recent developments in the field, including the emergence of ferroelectricity at the nanoscale and in two-dimensional systems.

Publication status

published

Editor

Book title

Volume

5 (3)

Pages / Article No.

1314 - 1334

Publisher

American Chemical Society

Event

Edition / version

Methods

Software

Geographic location

Date collected

Date created

Subject

ferroelectrics; oxides; thin films; beyond CMOS; second-harmonic generation; operando SHG; in situ SHG; perovskites

Organisational unit

03918 - Fiebig, Manfred / Fiebig, Manfred check_circle

Notes

Funding

188414 - Multifunctional oxide electronics using natural ferroelectric superlattices (SNF)
196061 - Designing oxide electronics with light (SNF)

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