Ferroelectric Thin Films for Oxide Electronics
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Date
2023-03-28
Publication Type
Review Article
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Abstract
Ferroelectric materials have set in motion numerous ultralow-energy-consuming device concepts that can be integrated into state-of-the-art complementary metal–oxide–semiconductor technology. Their nonvolatile, spontaneous electric polarization makes them promising candidates to control functionalities at the nanoscale with energy-efficient electric fields only. In this spotlight article, we start with a brief introduction to ferroelectric materials, the challenges involving the design of thin films and review the state-of-the-art of their integration into various electronic applications. Revolutionary in situ and operando diagnostic tools allowing the monitoring of the technology-relevant polarization state during the material design, or its operation will be detailed. Concepts such as chiral states in ferroelectrics and neuromorphic-type switching will be addressed to provide a comprehensive view on the evolution of ferroelectric states for the next generation of low-energy-consuming electronics. Finally, we discuss the most recent developments in the field, including the emergence of ferroelectricity at the nanoscale and in two-dimensional systems.
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published
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Journal / series
Volume
5 (3)
Pages / Article No.
1314 - 1334
Publisher
American Chemical Society
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Subject
ferroelectrics; oxides; thin films; beyond CMOS; second-harmonic generation; operando SHG; in situ SHG; perovskites
Organisational unit
03918 - Fiebig, Manfred / Fiebig, Manfred
Notes
Funding
188414 - Multifunctional oxide electronics using natural ferroelectric superlattices (SNF)
196061 - Designing oxide electronics with light (SNF)
196061 - Designing oxide electronics with light (SNF)