Plasmonic Ferroelectric Modulator Monolithically Integrated on SiN for 216 GBd Data Transmission
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Date
2023-06-15
Publication Type
Journal Article
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yes
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Abstract
A high-speed plasmonic barium titanate (BTO, BaTiO3) Mach-Zehnder modulator is presented. We combine nanoscale plasmonics with BTO as solid-state active material and silicon nitride (SiN) for versatile and low loss waveguiding, and integrate them in a monolithic platform. We demonstrate a plasmonic BTO modulator processed onto foundry-produced SiN. The 15 μm long high-speed modulator features a flat electro-optic frequency response up to 70 GHz and is expected to be flat way beyond. A low VπL product of 144 Vμm is shown. Data experiments reaching 216 Gbit/s with a 216 GBd 2PAM signal and 256 Gbit/s with a 128 GBd 4PAM signal are demonstrated. The merger of the versatile silicon nitride platform with high-speed plasmonics using the highly nonlinear ferroelectric BTO is an attractive solution as a future Tb/s optical interconnect platform.
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published
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Journal / series
Volume
41 (12)
Pages / Article No.
3825 - 3831
Publisher
IEEE
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Edition / version
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Software
Geographic location
Date collected
Date created
Subject
Barium titanate; electrooptic modulators; ferroelectric devices; high data rate; high-speed PICs; integrated photonic circuits; monolithic integration; plasmonics; silicon nitride
Organisational unit
03974 - Leuthold, Juerg / Leuthold, Juerg
02635 - Institut für Elektromagnetische Felder / Institute of Electromagnetic Fields
Notes
Funding
871658 - Neuro-augmented 112Gbaud CMOS plasmonic transceiver platform for Intra- and Inter-DCI (EC)
871391 - Energy- and Size-efficient Ultra-fast Plasmonic Circuits for Neuromorphic Computing Architectures (EC)
871391 - Energy- and Size-efficient Ultra-fast Plasmonic Circuits for Neuromorphic Computing Architectures (EC)