An efficient proximity-effect correction method for electron-beam patterning of photonic-crystal devices
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Date
2003-06
Publication Type
Conference Paper
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yes
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Abstract
A simple and accurate method was developed for proximity-effect correction (PEC) in electron-beam patterning of two-dimensional photonic-crystal devices. The method relies on the inherent periodicity of the underlying photonic-crystal structure, which is given as a corresponding matrix representation. This formulation sets up an “inverse exposure dose problem” which is then solved by matrix inversion. The proximity effect parameters are determined experimentally with the doughnut technique for a 30 kV acceleration voltage and 220 nm PMMA on InP substrates. A generic photonic-crystal bend structure, written into PMMA resist, shows an improvement of hole-size homogeneity by a factor of two, when comparing corrected with uncorrected structures.
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published
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Book title
Journal / series
Volume
67-68
Pages / Article No.
182 - 188
Publisher
Elsevier
Event
28th International Conference on Micro- and Nano-Engineering (MNE 2002)
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Methods
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Date collected
Date created
Subject
Proximity effect correction; Electron beam lithography; Photonic crystal
Organisational unit
03386 - Jäckel, Heinz (emeritus)
03262 - Bächtold, Werner (emeritus)