Electron Heating Due to Microwave Photoexcitation in the High Mobility GaAs/AlGaAs Two Dimensional Electron System
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Date
2013-12-04
Publication Type
Conference Paper
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Abstract
We extract the electron temperature in the microwave photo-excited high mobility GaAs/AlGaAs two dimensional electron system (2DES) by studying the influence of microwave radiation on the amplitude of Shubnikov-de Haas oscillations (SdHOs) in a regime where the cyclotron frequency, ωc, and the microwave angular frequency, ω, satisfy 2ω ≤ ωc ≤ 3.5ω The results indicate that increasing the incident microwave power has a weak effect on the amplitude of the SdHOs and therefore the electron temperature, in comparison to the influence of modest temperature changes on the dark-specimen SdH effect. The results indicate negligible electron heating under modest microwave photo-excitation, in good agreement with theoretical predictions. © 2013 AIP Publishing LLC.
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published
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Book title
The Physics of Semiconductors: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012
Journal / series
Volume
1566 (1)
Pages / Article No.
233 - 234
Publisher
American Institute of Physics
Event
31st International Conference on the Physics of Semiconductors (ICPS 2012)
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Subject
Radiation induce magnetoresistance oscillations; Radiation induce electron heating; Shubnikov-de Hass effect; Electron temperature
Organisational unit
03833 - Wegscheider, Werner / Wegscheider, Werner