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Charge Detection of Perovskite Nanowires Filled Single-Walled Carbon Nanotubes for CMOS ICs
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2025
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Journal Article
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Abstract
Inner doping of semiconducting single-walled carbon nanotubes (s-SWCNTs) with 1D CsPbBr3 nanowires enables powerful electronic modulation while preserving lattice integrity, crucial for nanoelectronics. However, characterizing these heterostructures-identifying CNT type, fill status, doping position, and charge effects at the individual level non-destructively remains challenging. Here, Kelvin Probe Force Microscopy (KPFM), Raman spectroscopy, and scanning electron microscopy (SEM) is employed, to positioning CsPbBr3@CNT heterostructures. Doping induced potential change across the CNT and the polarity of charge transfer can be directly resolved by this method at individual CNT level and a positioning precision of 89 nm, reveals a CNT diameter-dependent doping effect, with surface potential difference peaking at approximate to 130 mV for CNTs of 1.3-1.6 nm diameter, linked to confinement-induced CsPbBr3 phase transitions. This study further fabricates p/n-type field-effect transistors (FETs) on single CNTs with both doped and undoped regions, via a self-aligned top-gate process with low-work-function titanium (Ti) as the contact electrode. These devices demonstrate symmetric performance (on/off ratio > 10(3)) and enabling the realization of inverter with near-ideal voltage transition at half the supply voltage. The maintained device performance after 1 month storage confirms doping stability. These findings can advance the controlled synthesis and application of inner doped CNTs for high-performance nanoelectronics.
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2500837
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Wiley-VCH
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Subject
carbon Nanotubes; CsPbBr3 nanowires; inner doping; Kelvin probe force microscopy; nanoelectronics