3-W output power at 2 µm from a flip-chip processed InGaSb VECSEL based on a hybrid metal-semiconductor Bragg reflector
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Date
2023
Publication Type
Other Conference Item
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yes
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Abstract
The key limiting factor for output power scaling of VECSELs is the thermal resistance of the structure owing to the reflector thickness and the heat conductivity of the semiconductor materials. We have successfully fabricated a flip-chip processed VECSEL emitting at 2 µm using a GaSb/AlAs0.08Sb0.92 hybrid Bragg reflector with 10.5 mirror pairs and a 100–nm copper layer. The flip-chip processed VECSEL reaches a record high continuous wave average output power of 3 W. The device thickness is reduced by 2.5 µm (36%) compared to the standard 19.5 layer semiconductor-only Bragg reflector design.
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published
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Book title
Vertical External Cavity Surface Emitting Lasers (VECSELs) XII
Journal / series
Volume
12404
Pages / Article No.
1240406
Publisher
SPIE
Event
SPIE LASE 2023
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03371 - Keller, Ursula (emeritus) / Keller, Ursula (emeritus)