Controlling Volatility and Nonvolatility of Memristive Devices by Sn Alloying
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Date
2023-12-26
Publication Type
Journal Article
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yes
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Abstract
Memristive devices have attracted significant attention due to their downscaling potential, low power operation, and fast switching performance. Their inherent properties make them suitable for emerging applications such as neuromorphic computing, in-memory computing, and reservoir computing. However, the different applications demand either volatile or nonvolatile operation. In this study, we demonstrate how compliance current and specific material choices can be used to control the volatility and nonvolatility of memristive devices. Especially, by mixing different materials in the active electrode, we gain additional design parameters that allow us to tune the devices for different applications. We found that alloying Ag with Sn stabilizes the nonvolatile retention regime in a reproducible manner. Additionally, our alloying approach improves the reliability, endurance, and uniformity of the devices. We attribute these advances to stabilization of the filament inside the switching medium by the inclusion of Sn in the filament structure. These advantageous properties of alloying were found by investigating a choice of six electrode materials (Ag, Cu, AgCu-1, AgCu-2, AgSn-1, AgSn-2) and three switching layers (SiO2, Al2O3, HfO2).
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published
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Journal / series
Volume
5 (12)
Pages / Article No.
6842 - 6849
Publisher
American Chemical Society
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Edition / version
Methods
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Date collected
Date created
Subject
memristor; memristive switching; resistive switching; alloy; volatility; electrochemical metallization cells
Organisational unit
03974 - Leuthold, Juerg / Leuthold, Juerg
03925 - Luisier, Mathieu / Luisier, Mathieu
02635 - Institut für Elektromagnetische Felder / Institute of Electromagnetic Fields