Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications
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Author / Producer
Date
2017-06
Publication Type
Journal Article
ETH Bibliography
yes
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Rights / License
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Publication status
published
External links
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Book title
Journal / series
Volume
105 (6)
Pages / Article No.
1035 - 1050
Publisher
IEEE
Event
Edition / version
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Software
Geographic location
Date collected
Date created
Subject
Heterojunction bipolar transistors (HBTs); Highfrequency measurements; GaAsSb; Millimeter wave; Modeling; Reliability; SiGe; Technologies; Terahertz; Thermal effects
Organisational unit
03721 - Bolognesi, Colombo / Bolognesi, Colombo