Resonant Light Emission from Graphene/Hexagonal Boron Nitride/Graphene Tunnel Junctions
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Date
2021-10-13
Publication Type
Journal Article
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yes
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Abstract
Single-layer graphene has many remarkable properties
but does not lend itself as a material for light-emitting devices
as a result of its lack of a band gap. This limitation can be
overcome by a controlled stacking of graphene layers. Exploiting
the unique Dirac cone band structure of graphene, we demonstrate
twist-controlled resonant light emission from graphene/hexagonal
boron nitride (h-BN)/graphene tunnel junctions. We observe light
emission irrespective of the crystallographic alignment between the
graphene electrodes. Nearly aligned devices exhibit pronounced
resonant features in both optical and electrical characteristics that
vanish rapidly for twist angles θ ≳3°. These experimental findings
can be well-explained by a theoretical model in which the spectral
photon emission peak is attributed to photon-assisted momentum
conserving electron tunneling. The resonant peak in our aligned devices can be spectrally tuned within the near-infrared range by
over 0.2 eV, making graphene/h-BN/graphene tunnel junctions potential candidates for on-chip optoelectronics.
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Publication status
published
External links
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Book title
Journal / series
Volume
21 (19)
Pages / Article No.
8332 - 8339
Publisher
American Chemical Society
Event
Edition / version
Methods
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Geographic location
Date collected
Date created
Subject
graphene tunneling device; field-effect tunneling transistor; inelastic electron tunneling; photon-assisted tunneling
Organisational unit
03944 - Novotny, Lukas / Novotny, Lukas
02205 - FIRST-Lab / FIRST Center for Micro- and Nanoscience
Notes
Funding
192362 - Antenna-coupled Optoelectronics (SNF)
Related publications and datasets
Is supplemented by: https://doi.org/10.3929/ethz-b-000511677