High-Speed Steep-Slope GaInAs Impact Ionization MOSFETs (I-MOS) With SS = 1.25 mV/dec - Part I: Material and Device Characterization, DC Performance, and Simulation
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Date
2022-07
Publication Type
Journal Article, Journal Article
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yes
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Abstract
Digital electronics power consumption evolved into a major concern: at the current pace, general-purpose computing energy consumption will exceed global energy production before 2045. The principal approach to curbing energy consumption in digital applications calls for ``steep-slope'' devices with an inverse subthreshold slope (SS) parameter well below the ``ln(10)·kT/q'' limit of conventional electronics (60 mV/dec at 300 K). Impact ionization MOSFETs (I-MOS) provide an avenue for steep-slope device realization. High-mobility narrow gap III-V semiconductor channel materials have not yet been investigated for I-MOS applications. We hereby report E-mode narrow bandgap GaInAs-based I-MOS devices with an SS of 1.25 mV/dec maintained over five orders of magnitude in drain current and Ion / Ioff ratios >10⁶ at 300 K (>10⁹ at 15 K) for a gate length of LG = 100 nm. Part I of this work focuses on the materials and device fabrication and analysis, device dc characterization, and modeling. The present GaInAs devices are the first I-MOS transistors to display a robust steep-slope effect at low voltages VDS < 1.9 V at 300 K and <1 V at 15 K. Part II describes the dynamic switching (including clarifications on the role of hysteresis) and RF characteristics of GaInAs I-MOS devices and benchmarks them with respect to other steep-slope technologies.
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published
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Journal / series
Volume
69 (7)
Pages / Article No.
3542 - 3548
Publisher
IEEE
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Date collected
Date created
Subject
Atomic layer deposition (ALD); GaInAs; impact ionization; impact ionization MOSFET (I-MOS); inverse subthreshold slope (SS); MOSFET; RF performance; steep slope
Organisational unit
03721 - Bolognesi, Colombo / Bolognesi, Colombo
02205 - FIRST-Lab / FIRST Center for Micro- and Nanoscience
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Related publications and datasets
Is continued by: https://doi.org/10.3929/ethz-b-000547203