Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies
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Date
2021-05
Publication Type
Journal Article
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yes
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Abstract
Accelerated terrestrial neutron irradiations were performed on different commercial SiC power MOSFETs with planar, trench and double-trench architectures. The results were used to calculate the failure cross-sections and the failure in time (FIT) rates at sea level. Enhanced gate and drain leakage were observed in some devices which did not exhibit a destructive failure during the exposure. In particular, a different mechanism was observed for planar and trench gate MOSFETs, the first showing a partial gate rupture with a leakage path mostly between drain and gate, similar to what was previously observed with heavy-ions, while the second exhibiting a complete gate rupture. The observed failure mechanisms and the post irradiation gate stress (PIGS) tests are discussed for the different technologies.
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published
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Journal / series
Volume
68 (5)
Pages / Article No.
634 - 641
Publisher
IEEE
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Software
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Date collected
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Subject
Silicon Carbide; Power MOSFETs; neutrons; Single Event Effects; Single Event Burnout; gate damage
Organisational unit
09480 - Grossner, Ulrike / Grossner, Ulrike