Scaled III-V optoelectronic devices on silicon
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Date
2020
Publication Type
Conference Paper
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Abstract
In the present talk we discuss the development of the epitaxial technique Template-Assisted Selective Epitaxy (TASE)and its application for the monolithic integration of scaled III - V active photonic devices on silicon. A unique advantage of TASE for silicon photonics applications is that it enables a truly local integration of III-V material at precisely defined positions, it is therefore particularly suited for densely Integrated nanophotonic devices. Here we will discuss our work on InP-based microdisk lasers fabricated by either direct TASE growth or via the use of micro-substrates. Optical mode simulations using Lumerical are used to explore the design space. Notably, we are exploring the use of metal-clad cavities for further light confinement. The metal-clad cavities enable scaling of the laser diameter beyond what is achievable with a pure photonic cavity. Thermal simulations are used to explore the impact of the metal-cladding as a heat sink as opposed to plasmonic operation. We also evaluate the potential for electrical actuation and will show first results on monolithic photodetectors, using Sentaurus simulations to improve our understanding of device performance.
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published
Editor
Book title
2020 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
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Pages / Article No.
93 - 94
Publisher
IEEE
Event
20th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2020) (virtual)
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Organisational unit
03925 - Luisier, Mathieu / Luisier, Mathieu
08837 - Schenk, Andreas (Tit.-Prof.)
Notes
Due to the Coronavirus (COVID-19) the conference was conducted virtually.