Gate-defined two-dimensional hole and electron systems in an undoped InSb quantum well
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Date
2023
Publication Type
Journal Article
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yes
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Abstract
Quantum transport measurements are performed in gate-defined, high-quality, two-dimensional hole and electron systems in an undoped InSb quantum well. For both polarities, the carrier systems show tunable spin-orbit interaction as extracted from weak antilocalization measurements. The effective mass of InSb holes strongly increases with carrier density as determined from the temperature dependence of Shubnikov–de Haas oscillations. Coincidence measurements in a tilted magnetic field are performed to estimate the spin susceptibility of the InSb two-dimensional hole system. The g factor of the two-dimensional hole system decreases rapidly with increasing carrier density.
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published
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Volume
5 (1)
Pages / Article No.
13117
Publisher
American Physical Society
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03439 - Ensslin, Klaus / Ensslin, Klaus
08835 - Ihn, Thomas (Tit.-Prof.)
02205 - FIRST-Lab / FIRST Center for Micro- and Nanoscience
03833 - Wegscheider, Werner / Wegscheider, Werner