Retention in nonvolatile silicon transistors with an organic ferroelectric gate
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Date
2009-06
Publication Type
Journal Article
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yes
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published
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94 (26)
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Publisher
American Institute of Physics
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Subject
Dielectric polarisation; Elemental semiconductors; Ferroelectric materials; Ferroelectric storage; MOSFET; Permittivity; Polymer blends; Random-access storage; Semiconductor storage; Silicon
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Notes
Received 10 February 2009, Accepted 28 May 2009, Published online 1 July 2009.