Graphene single-electron transistors
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Author / Producer
Date
2010-03
Publication Type
Review Article
ETH Bibliography
yes
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Abstract
Graphene, a single layer of carbon atoms forming a perfectly stable and clean two-dimensional crystal with very few defects, has been proclaimed to be a new revolutionary material for electronics. These hopes rest mainly on the unique band structure properties of graphene. Although living essentially on the surface, electron mobilities in this material do not suffer extensively from surface contaminations and are surprisingly high even at room temperature. In comparison to extremely high quality semiconducting materials, such as Silicon and GaAs, the understanding of electronic transport in graphene is still in its infancy. Research on nanoscale transistors switching with only a single electron exemplifies that there are a number of unresolved problems that material scientists should tackle in the future for making the graphene dreams come true.
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Publication status
published
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Book title
Journal / series
Volume
13 (3)
Pages / Article No.
44 - 50
Publisher
Elsevier
Event
Edition / version
Methods
Software
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Date collected
Date created
Subject
Organisational unit
03439 - Ensslin, Klaus / Ensslin, Klaus
08835 - Ihn, Thomas (Tit.-Prof.)
Notes
Available online 20 March 2010.