Seamless in two dimensions: prospects of lateral heterostructures from integration to quantum devices


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Date

2025-12

Publication Type

Review Article

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yes

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Abstract

Lateral heterostructures of two-dimensional (2D) transition metal dichalcogenides feature atomically sharp, covalently stitched 1D interfaces that enable direct band-to-band coupling. This perspective highlights their unique ability to control quasiparticles, excitons, and spins, with implications for optoelectronics, excitonic and valleytronic devices, tunneling field-effect transistors, neuromorphic computing, spintronics, and quantum circuits. It also outlines challenges in scalable synthesis, interface engineering, and 2D–3D integration, charting paths toward future quantum technologies.

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published

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Volume

9 (1)

Pages / Article No.

94

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